First high speed NAND product from Micron
8 February 2008On February, 1 Micron has presented high-speed flash-memory NAND. Reading speed of a new memory-store makes 200 MB per second, and speed of record - up to 100 MB per second.
Usual NAND devices have reading speed no more than 40 MB, and speed of record makes less than 20 MB.
New storage is created according to 55-nanometer technological process and carries up to 100 thousand cycles of reading/recording. The offered samples can store up to 8 GB of the data.
High-speed NAND device is hoped to be to put into mass production in second half of 2008.
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